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Model No.: NSO4GU3AB
Transportasi: Ocean,Air,Express,Land
Tipe Pembayaran: L/C,T/T,D/A
Incoterm: FOB,EXW,CIF
4GB 1600mHz 240-pin DDR3 udim
Sejarah révisiasi
Revision No. |
History |
Draft Date |
Remark |
1.0 |
Initial Release |
Apr. 2022 |
|
Tabel Informasi Pesenan
Model |
Density |
Speed |
Organization |
Component Composition |
NS04GU3AB |
4GB |
1600MHz |
512Mx64bit |
DDR3 256Mx8 *16 |
Katrangan
Hengstar DDRRam DDR3 DDRRam DDR3 (sing ora ana dobel data Synchronoous dram dual memori Modul sing murah, modul memori operasional sing murah, modul memori operasional dhuwur-kacepetan sing nggunakake piranti DDR3 SDRam. NS04GU3AB minangka 512m x 64-bit rong pangkat produk DDR3-1600 Cl11 1.5v produk dimm, adhedhasar kaping enem taun 256m x 86m x 8-bit komponen fbga. SPD diprogram kanggo Jedec Standard Lency DDR3-1600 wektu saka 11-11-11 ing 1.5V. Saben 240-pin Dimm nggunakake driji kontak emas. SDRAM sing durung rampung Dimm dimaksudake minangka memori utama nalika diinstal ing sistem kayata PC lan workstations.
Fitur
Pasokan power: VDD = 1.5V (1.425V nganti 1.575v)
vddq = 1.5V (1.425V nganti 1.575v)
800mhz FCT kanggo 1600MB / sec / pin
8 bank internal mandiri
Programable cas laten: 11, 10, 9, 8, 7, 6
Lency Aditif: 0, Cl - 2, utawa CL - 1 Jam
8-bit pra-fetch
Dawane burst: 8 (interleave tanpa watesan, urutan karo alamat wiwitan "000" mung), 4 karo TCCD = 4 sing ora bisa maca utawa nulis kanthi nggunakake A12 utawa MRS]
Strobe diferensial Bi-arah arah
Kalibrasi Irall lair; Kalibrasi internal liwat ZQ pin (RZQ: 240 ohm ± 1%)
on mati mandap nggunakake pin odt
Refresh Afresage refresh 7,8us luwih murah tinimbang kence 85 ° C, 3.9us ing 85 ° C <TCase <95 ° C
asynchronous reset
Kekuwatan data-output data
fly-by topology
pcb: Dhuwur 1.18 "(30mm)
rohs netepi lan bebas halogen
Parameter Timing Key
MT/s |
tRCD(ns) |
tRP(ns) |
tRC(ns) |
CL-tRCD-tRP |
DDR3-1600 |
13.125 |
13.125 |
48.125 |
2011/11/11 |
Tabel alamat
Configuration |
Refresh count |
Row address |
Device bank address |
Device configuration |
Column Address |
Module rank address |
4GB |
8K |
32K A[14:0] |
8 BA[2:0] |
2Gb (256 Meg x 8) |
1K A[9:0] |
2 S#[1:0] |
Deskripsi Pin
Symbol |
Type |
Description |
Ax |
Input |
Address inputs: Provide the row address for ACTIVE commands, and the column |
BAx |
Input |
Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or |
CKx, |
Input |
Clock: Differential clock inputs. All control, command, and address input signals are |
CKEx |
Input |
Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry |
DMx |
Input |
Data mask (x8 devices only): DM is an input mask signal for write data. Input data is |
ODTx |
Input |
On-die termination: Enables (registered HIGH) and disables (registered LOW) |
Par_In |
Input |
Parity input: Parity bit for Ax, RAS#, CAS#, and WE#. |
RAS#, |
Input |
Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being |
RESET# |
Input |
Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and |
Sx# |
Input |
Chip select: Enables (registered LOW) and disables (registered HIGH) the command |
SAx |
Input |
Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address |
SCL |
Input |
Serial |
CBx |
I/O |
Check bits: Used for system error detection and correction. |
DQx |
I/O |
Data input/output: Bidirectional data bus. |
DQSx, |
I/O |
Data strobe: Differential data strobes. Output with read data; edge-aligned with read data; |
SDA |
I/O |
Serial |
TDQSx, |
Output |
Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD |
Err_Out# |
Output (open |
Parity error output: Parity error found on the command and address bus. |
EVENT# |
Output (open |
Temperature event: The EVENT# pin is asserted by the temperature sensor when critical |
VDD |
Supply |
Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The |
VDDSPD |
Supply |
Temperature sensor/SPD EEPROM power supply: 3.0–3.6V. |
VREFCA |
Supply |
Reference voltage: Control, command, and address VDD/2. |
VREFDQ |
Supply |
Reference voltage: DQ, DM VDD/2. |
VSS |
Supply |
Ground. |
VTT |
Supply |
Termination voltage: Used for control, command, and address VDD/2. |
NC |
– |
No connect: These pins are not connected on the module. |
NF |
– |
No function: These pins are connected within the module, but provide no functionality. |
CATETAN : Tabel katrangan pin ing ngisor iki minangka dhaptar lengkap kabeh pin kanggo kabeh modul DDR3. Kabeh pin sing kadhaptar bisa Ora didhukung ing modul iki. Deleng tugas PIN kanggo informasi khusus kanggo modul iki.
Diagram blok fungsi
4GB, modul 512mx64 (2RAK saka x8)
Ukuran modul
Tampilan ngarep
Tampilan ngarep
Cathetan:
1.Amarga Dimensi ana ing milimeter (inci); Max / min utawa khas (Typ) sing dicathet.
2.Pilih ukuran kabeh ± 0,15mm kajaba sing ditemtokake.
3. Gambar dimensi mung kanggo referensi mung.
Kategori Produk : Aksesoris Modul Smart Industri
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Isi informasi luwih lengkap supaya bisa ngubungi sampeyan kanthi luwih cepet
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