Shenzhen Hengstar Technology Co., Ltd.

Shenzhen Hengstar Technology Co., Ltd.

sales@angeltondal.com

86-755-89992216

Shenzhen Hengstar Technology Co., Ltd.
HomeProdukAksesoris Modul Smart IndustriModul Memorial Memori DDR3 UDIMD UDIMM

Modul Memorial Memori DDR3 UDIMD UDIMM

Tipe Pembayaran:
L/C,T/T,D/A
Incoterm:
FOB,EXW,CIF
Min. Pesenan:
1 Piece/Pieces
Transportasi:
Ocean,Air,Express,Land
  • Deskripsi Produk
Overview
Atribut Produk

Model No.NSO4GU3AB

Kemampuan Suplai & Informasi Tambahan

TransportasiOcean,Air,Express,Land

Tipe PembayaranL/C,T/T,D/A

IncotermFOB,EXW,CIF

Kemasan & Pengiriman
Unit Adol:
Piece/Pieces

4GB 1600mHz 240-pin DDR3 udim


Sejarah révisiasi

Revision No.

History

Draft Date

Remark

1.0

Initial Release

Apr. 2022

 

Tabel Informasi Pesenan

Model

Density

Speed

Organization

Component Composition

NS04GU3AB

4GB

1600MHz

512Mx64bit

DDR3 256Mx8 *16


Katrangan
Hengstar DDRRam DDR3 DDRRam DDR3 (sing ora ana dobel data Synchronoous dram dual memori Modul sing murah, modul memori operasional sing murah, modul memori operasional dhuwur-kacepetan sing nggunakake piranti DDR3 SDRam. NS04GU3AB minangka 512m x 64-bit rong pangkat produk DDR3-1600 Cl11 1.5v produk dimm, adhedhasar kaping enem taun 256m x 86m x 8-bit komponen fbga. SPD diprogram kanggo Jedec Standard Lency DDR3-1600 wektu saka 11-11-11 ing 1.5V. Saben 240-pin Dimm nggunakake driji kontak emas. SDRAM sing durung rampung Dimm dimaksudake minangka memori utama nalika diinstal ing sistem kayata PC lan workstations.


Fitur
Pasokan power: VDD = 1.5V (1.425V nganti 1.575v)
vddq = 1.5V (1.425V nganti 1.575v)
800mhz FCT kanggo 1600MB / sec / pin
8 bank internal mandiri
Programable cas laten: 11, 10, 9, 8, 7, 6
Lency Aditif: 0, Cl - 2, utawa CL - 1 Jam
8-bit pra-fetch
Dawane burst: 8 (interleave tanpa watesan, urutan karo alamat wiwitan "000" mung), 4 karo TCCD = 4 sing ora bisa maca utawa nulis kanthi nggunakake A12 utawa MRS]
Strobe diferensial Bi-arah arah
Kalibrasi Irall lair; Kalibrasi internal liwat ZQ pin (RZQ: 240 ohm ± 1%)
on mati mandap nggunakake pin odt
Refresh Afresage refresh 7,8us luwih murah tinimbang kence 85 ° C, 3.9us ing 85 ° C <TCase <95 ° C
asynchronous reset
Kekuwatan data-output data
fly-by topology
pcb: Dhuwur 1.18 "(30mm)
rohs netepi lan bebas halogen


Parameter Timing Key

MT/s

tRCD(ns)

tRP(ns)

tRC(ns)

CL-tRCD-tRP

DDR3-1600

13.125

13.125

48.125

2011/11/11


Tabel alamat

Configuration

Refresh count

Row address

Device bank address

Device configuration

Column Address

Module rank address

4GB

8K

32K A[14:0]

8 BA[2:0]

2Gb (256 Meg x 8)

1K A[9:0]

2 S#[1:0]


Deskripsi Pin

Symbol

Type

Description

Ax

Input

Address inputs: Provide the row address  for ACTIVE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one location
out of the memory array in the respective bank. A10 sampled during a PRECHARGE
command determines whether the PRECHARGE applies to one bank (A10 LOW, bank
selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code
during a LOAD MODE command. See the Pin Assignments table for density-specific
addressing information.

BAx

Input

Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA define which mode register (MR0, MR1,
MR2, or MR3) is loaded during the LOAD MODE command.

CKx,
CKx#

Input

Clock: Differential clock inputs. All control, command, and address input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#.

CKEx

Input

Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry
and clocks on the DRAM.

DMx

Input

Data mask (x8 devices only): DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH, along with that input data, during a write access.
Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins.

ODTx

Input

On-die  termination:  Enables  (registered  HIGH)  and  disables  (registered  LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal operation,
ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be ignored if disabled via the LOAD MODE command.

Par_In

Input

Parity input: Parity bit for Ax, RAS#, CAS#, and WE#.

RAS#,
CAS#,
WE#

Input

Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.

RESET#

Input
(LVCMOS)

Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and
the registering clock driver. After RESET# goes HIGH, the DRAM must be reinitialized as
though a normal power-up was executed.

Sx#

Input

Chip select: Enables (registered LOW) and disables (registered HIGH) the command
decoder.

SAx

Input

Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address
range on the I2C bus.

SCL

Input

Serial
communication to and from the temperature sensor/SPD EEPROM on the I2C bus.

CBx

I/O

Check bits: Used for system error detection and correction.

DQx

I/O

Data input/output: Bidirectional data bus.

DQSx,
DQSx#

I/O

Data strobe: Differential data strobes. Output with read data; edge-aligned with read data;
input with write data; center-alig

SDA

I/O

Serial
sensor/SPD EEPROM on the I2C bus.

TDQSx,
TDQSx#

Output

Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When TDQS is enabled, DM is
disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are no
function.

Err_Out#

Output (open
drain)

Parity error output: Parity error found on the command and address bus.

EVENT#

Output (open
drain)

Temperature event: The EVENT# pin is asserted by the temperature sensor when critical
temperature thresholds have been exceeded.

VDD

Supply

Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The
component VDD and VDDQ are connected to the module VDD.

VDDSPD

Supply

Temperature sensor/SPD EEPROM power supply: 3.0–3.6V.

VREFCA

Supply

Reference voltage: Control, command, and address VDD/2.

VREFDQ

Supply

Reference voltage: DQ, DM VDD/2.

VSS

Supply

Ground.

VTT

Supply

Termination voltage: Used for control, command, and address VDD/2.

NC

No connect: These pins are not connected on the module.

NF

No function: These pins are connected within the module, but provide no functionality.

CATETAN : Tabel katrangan pin ing ngisor iki minangka dhaptar lengkap kabeh pin kanggo kabeh modul DDR3. Kabeh pin sing kadhaptar bisa Ora didhukung ing modul iki. Deleng tugas PIN kanggo informasi khusus kanggo modul iki.


Diagram blok fungsi

4GB, modul 512mx64 (2RAK saka x8)

1


2


Cathetan:
1. Bola Bola ZQ ing saben komponen DDR3 disambungake menyang resistor resistor 240 up ± 1% sing diikat menyang lemah. Iki digunakake kanggo kalibrasi driver mandap lan output persediaan komponen.



Ukuran modul


Tampilan ngarep

3

Tampilan ngarep

4

Cathetan:
1.Amarga Dimensi ana ing milimeter (inci); Max / min utawa khas (Typ) sing dicathet.
2.Pilih ukuran kabeh ± 0,15mm kajaba sing ditemtokake.
3. Gambar dimensi mung kanggo referensi mung.

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